Infrared Heating Lamps & Quartz Tubes
Quartz glass tubes, plates, boats and lab apparatus for semiconductor and photovoltaic furnace processes. Sizes from Φ130 to 800 mm, wall 3–20 mm, lengths to 4.5 m.
Typical dimension ranges per equipment type, as documented by the manufacturing plant.
| Equipment | Process use | Tube OD | Wall | Length | Temp. |
|---|---|---|---|---|---|
| Diffusion / oxidation furnace (semi) | Wafer doping (P/B/As), thermal SiO₂ growth | Φ130–350 mm | 4–8 mm | 1–3 m | 900–1200 °C |
| LPCVD / APCVD furnace tube | SiN, poly-Si, SiO₂ film deposition | Φ150–450 mm | 5–10 mm | 1.5–4 m | 750–900 °C |
| Annealing furnace / RTP preheat tube | Crystal damage removal, dopant activation | Φ150–400 mm | 4–8 mm | 1–3 m | — |
| Ion implanter beamline tube | Ion beam isolation, contamination-proof liner | Φ130–250 mm | 3–6 mm | 1–2.5 m | — |
| Epitaxial growth reactor (Epi) | Si/SiGe/GaN epi growth, reaction chamber | Φ200–500 mm | 5–12 mm | 1–2 m | — |
| Tube-type PECVD coating furnace (PV) | SiNₓ passivation / anti-reflection (PERC/TOPCon) | Φ300–600 mm | 6–14 mm | 2–4.5 m | 400–550 °C |
| PV diffusion furnace (P/B) | N/P junction formation (TOPCon/HJT front-end) | Φ400–600 mm | 8–14 mm | 2.5–4.5 m | 850–950 °C |
| Tube annealing / oxidation furnace (PV) | TOPCon tunnel oxidation, poly-Si annealing | Φ350–600 mm | 8–14 mm | 2–4 m | — |
| Poly / mono ingot furnace (thermal field) | CZ/DSS process, heat-shield and guide tubes | Φ400–800 mm | 10–20 mm | 1–3 m | — |
| RTP / firing furnace | Halogen-lamp quartz outer tube, instant heating | Φ130–200 mm | 3–6 mm | 1–2 m | 600–1100 °C |
Send us the specification you need — dimensions, voltage, operating temperature, quantity. We answer within one working day.